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参数资料
| 型号： | APL602B2 |
| 元件分类： | JFETs |
| 英文描述： | 49 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | B2, TMAX-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 71K |
| 代理商： | APL602B2 |
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
STATIC ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-5894
Rev
E
8-2003
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 A)
On State Drain Current 2 (V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 12V)
Drain-Source On-State Resistance
2 (V
GS
= 12V, 24.5A)
Zero Gate Voltage Drain Current (V
DS
= 600v, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 480V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 2.5mA)
MIN
TYP
MAX
600
49
0.125
25
250
±100
24
UNIT
Volts
Amps
Ohms
A
nA
Volts
Symbol
BV
DSS
I
D
(ON)
R
DS
(ON)
I
DSS
I
GSS
V
GS
(TH)
APT Website - http://www.advancedpower.com
LINEAR MOSFET
Linear Mosfets are optimized for applications operating in the Linear
region where concurrent high voltage and high current can occur at
near DC conditions (>100 msec).
Higher FBSOA
Higher Power Dissipation
Popular T-MAX or TO-264 Package
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
APL602B2-L
600
49
196
±30
±40
730
5.84
-55 to 150
300
49
50
3000
T-MAX
TO-264
B2
APL602B2
APL602L
600V
49A 0.125
G
D
S
L
相关PDF资料 |
PDF描述 |
|---|---|
| APL602L | 49 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APL602B2 | 49 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APM9948KC-TRG | 4 A, 60 V, 0.085 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| APM9948KC-TRL | 4 A, 60 V, 0.085 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| APT10021JFLL | 37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APL602B2G | 功能描述:MOSFET N-CH 600V 49A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APL602J | 功能描述:MOSFET N-CH 600V 43A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APL602L | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Volts:600V RDS(ON)0.125Ohms ID(cont):49Amps|Linear MOSFETs |
| APL602L-1 | 制造商:Microsemi Corporation 功能描述:APL602L-1 - Bulk |
| APL602LG | 功能描述:MOSFET N-CH 600V 49A TO-264 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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