参数资料
型号: APM2055NU
厂商: Anpec Electronics Corporation
英文描述: N-Channel Enhancement Mode MOSFET
中文描述: N沟道增强型MOS管
文件页数: 3/10页
文件大小: 189K
代理商: APM2055NU
Copyright
ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
www.anpec.com.tw
3
APM2055NU
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
APM2055NU
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
DS
=250
μ
A
V
DS
=16V, V
GS
=0V
20
V
1
I
DSS
Zero Gate Voltage Drain Current
T
J
=85°C
30
μ
A
V
GS(th)
I
GSS
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=250
μ
A
V
GS
=±16V, V
DS
=0V
V
GS
=10V, I
DS
=12A
V
GS
=4.5V, I
DS
=6A
V
GS
=2.5V, I
DS
=2A
0.6
0.9
1.5
V
Gate Leakage Current
±100
nA
55
70
75
90
R
DS(ON)
a
Drain-Source On-state Resistance
140
160
m
Diode Characteristics
V
SD
Diode Forward Voltage
a
I
SD
=2A, V
GS
=0V
0.7
1.3
V
Dynamic Characteristics
b
R
G
Gate Resistance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
t
d(ON)
Turn-on Delay Time
T
r
Turn-on Rise Time
t
d(OFF)
Turn-off Delay Time
T
f
Turn-off Fall Time
V
GS
=0V,V
DS
=0V,F=1MHz
2.5
380
120
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
75
pF
5
8
13
23
16
24
V
DD
=10V, R
L
=10
,
I
DS
=1A, V
GEN
=4.5V,
R
G
=6
3
5
ns
Gate Charge Characteristics
b
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
Notes:
a : Pulse test ; pulse width
300
μ
s, duty cycle
2%.
b : Guaranteed by design, not subject to production testing.
5.4
7
1.4
V
DS
=10V, V
GS
=4.5V,
I
DS
=12A
1.7
nC
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