参数资料
型号: APM2070PDC-TR
厂商: Anpec Electronics Corporation
英文描述: P-Channel Enhancement Mode MOSFET
中文描述: P沟道增强型MOS管
文件页数: 2/10页
文件大小: 125K
代理商: APM2070PDC-TR
!"#$$%
#
(T
A
= 25
°
C unless otherwise noted)
!"
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
Rating
Unit
V
DSS
V
GSS
Drain-Source Voltage
-20
Gate-Source Voltage
±12
V
I
D
*
Continuous Drain Current
-3
I
DM
*
I
S
*
300
μ
s Pulsed Drain Current
Diode Continuous Forward Current
V
GS
=-4.5V
-12
A
-1.5
A
T
J
T
STG
Maximum Junction Temperature
150
Storage Temperature Range
-55 to 150
°
C
T
A
=25
°
C
T
A
=100
°
C
1.47
0.58
P
D
*
Power Dissipation for Single Operation
W
R
θ
JA
*
Thermal Resistance-Junction to Ambient
85
°
C/W
Note:
*Surface Mounted on 1in
2
pad area, t
10sec.
APM2070PD
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
DS
=-250
μ
A
V
DS
=-16V, V
GS
=0V
-20
V
-1
I
DSS
Zero Gate Voltage Drain Current
T
J
=85
°
C
-30
μ
A
V
GS(th)
I
GSS
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=-250
μ
A
V
GS
=±12V, V
DS
=0V
V
GS
=-4.5V, I
DS
=-3A
V
GS
=-2.5V, I
DS
=-1.5A
I
SD
=-1A , V
GS
=0V
-0.6
-0.75
-1
V
Gate Leakage Current
±100
nA
50
70
R
DS(ON)
a
Drain-Source On-state Resistance
70
100
m
V
SD
a
Diode Forward Voltage
-0.7
-1.3
V
Gate Charge Characteristics
b
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
17.4
23
2.7
V
DS
=-10V, V
GS
=-4.5V,
I
DS
=-3A
3.8
nC
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