参数资料
型号: APM2322AC-TRL
厂商: Anpec Electronics Corporation
英文描述: N-Channel Enhancement Mode MOSFET
中文描述: N沟道增强型MOS管
文件页数: 2/10页
文件大小: 123K
代理商: APM2322AC-TRL
!"#$$%
#
(T
A
= 25
°
C unless otherwise noted)
!"#
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
Rating
Unit
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
Drain-Source Voltage
30
Gate-Source Voltage
±12
V
Continuous Drain Current
3
300
μ
s Pulsed Drain Current
Diode Continuous Forward Current
V
GS
=10V
12
A
1
A
T
J
T
STG
Maximum Junction Temperature
150
Storage Temperature Range
-55 to 150
°
C
T
A
=25
°
C
T
A
=100
°
C
0.83
0.3
P
D
*
Maximum Power Dissipation
W
R
θ
JA
*
Thermal Resistance-Junction to Ambient
150
°
C/W
Note:
*Surface Mounted on 1in
2
pad area, t
10sec.
APM2318A
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
DS
=250
μ
A
30
V
V
DS
=24V, V
GS
=0V
1
I
DSS
Zero Gate Voltage Drain Current
T
J
=85
°
C
30
μ
A
V
GS(th)
I
GSS
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=250
μ
A
V
GS
=±12V, V
DS
=0V
V
GS
=10V, I
DS
=3A
V
GS
=4.5V, I
DS
=2A
V
GS
=2.5V, I
DS
=1.5A
I
SD
=0.5A, V
GS
=0V
0.5
0.7
1
V
Gate Leakage Current
±100
nA
35
50
40
55
R
DS(ON)
a
Drain-Source On-state Resistance
60
80
m
V
SD
a
Diode Forward Voltage
0.7
1.3
V
Gate Charge Characteristics
b
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
12
16
0.8
V
DS
=15V, V
GS
=10V,
I
DS
=3A
0.8
nC
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