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参数资料
| 型号： | APM2324AC-TUL |
| 厂商： | Anpec Electronics Corporation |
| 英文描述： | N-Channel Enhancement Mode MOSFET |
| 中文描述： | N沟道增强型MOS管 |
| 文件页数： | 2/10页 |
| 文件大小： | 195K |
| 代理商： | APM2324AC-TUL |
Copyright
ANPEC Electronics Corp.
Rev. B.3 - S ep., 2005
www.anpec.com.tw
2
APM2324A
Absolute Maximum Rating s
(T
A
= 25
°
C unless otherwise noted)
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
Rating
Unit
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
Drain-Source Voltage
20
Gate-Source Voltage
±10
V
Continuous Drain Current
3
Pulsed Drain Current
Diode Continuous Forward Current
V
GS
=4.5V
10
1
A
A
T
J
T
STG
Maximum Junction Temperature
150
Storage Temperature Range
-55 to 150
°C
T
A
=25°C
T
A
=100°C
0.83
0.3
P
D
*
Maximum Power Dissipation
W
R
θ
JA
*
Thermal Resistance-Junction to Ambient
150
°C/W
APM2324A
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
Zero Gate Voltage Drain Current
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
V
GS
=0V, I
DS
=250
μ
A
V
DS
=16V, V
GS
=0V
V
DS
=V
GS
, I
DS
=250
μ
A
V
GS
=±10V, V
DS
=0V
V
GS
=4.5V, I
DS
=3A
V
GS
=2.5V, I
DS
=2A
I
SD
=0.5A, V
GS
=0V
20
V
1
μ
A
V
0.5
0.7
1
±100
nA
50
70
R
DS(ON)
a
Drain-Source On-state Resistance
90
110
m
V
SD
a
Diode Forward Voltage
0.7
1.3
V
Gate Charge Characteristics
b
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
5
6.5
0.7
V
DS
=10V, V
GS
=4.5V,
I
DS
=3A
0.7
nC
Note:
*Surface Mounted on 1in
2
pad area, t
≤
10sec.
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