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参数资料
| 型号： | APM2506NUBC-PBL |
| 厂商： | ANPEC ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel Enhancement Mode MOSFET |
| 中文描述： | 12 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 3/10页 |
| 文件大小： | 180K |
| 代理商： | APM2506NUBC-PBL |
Copyright
ANPEC Electronics Corp.
Rev. B.2 - Jun., 2006
www.anpec.com.tw
3
APM2506NUB
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
Notes:
a : Pulse test ; pulse width
≤
300
μ
s, duty cycle
≤
2
%.
b : Guaranteed by design, not subject to production testing.
APM2506NUB
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Drain-Source Avalanche Ratings
E
AS
Drain-Source Avalanche Energy
I
D
=20A, L=0.5mH
100
mJ
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
Zero Gate Voltage Drain Current
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
V
GS
=0V, I
DS
=250
μ
A
V
DS
=20V, V
GS
=0V
V
DS
=V
GS
, I
DS
=250
μ
A
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=40A
V
GS
=4.5V, I
DS
=20A
25
V
1
μ
A
V
1.3
1.8
2.5
±100
nA
4.8
6
R
DS(ON)
a
Drain-Source On-state Resistance
7
9
m
Diode Characteristics
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
a
I
SD
=20A, V
GS
=0V
0.7
1.1
V
b
30
ns
b
I
SD
=10A, dI
SD
/dt =100A/
μ
s
14
nC
Dynamic Characteristics
b
R
G
Gate Resistance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
t
d(ON)
Turn-on Delay Time
T
r
Turn-on Rise Time
t
d(OFF)
Turn-off Delay Time
T
f
Turn-off Fall Time
V
GS
=0V,V
DS
=0V,F=1MHz
1.0
2.1
3100
680
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
520
pF
19
20
62
V
DD
=15V, R
L
=15
,
I
DS
=1A, V
GEN
=10V,
R
G
=6
43
ns
Gate Charge Characteristics
b
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
37.5
56
9.4
V
DS
=15V, V
GS
=4.5V,
I
DS
=40A
21
nC
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| APM2509NUB | N-Channel Enhancement Mode MOSFET |
| APM2509NUBC-PB | N-Channel Enhancement Mode MOSFET |
| APM2509NUBC-PBL | N-Channel Enhancement Mode MOSFET |
| APM2509NU | N-Channel Enhancement Mode MOSFET |
| APM2509NUC-TR | N-Channel Enhancement Mode MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APM2506NUC-TR | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:N-Channel Enhancement Mode MOSFET |
| APM2506NUC-TRL | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:N-Channel Enhancement Mode MOSFET |
| APM2506NUC-TU | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:N-Channel Enhancement Mode MOSFET |
| APM2506NUC-TUL | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:N-Channel Enhancement Mode MOSFET |
| APM2509NU | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:N-Channel Enhancement Mode MOSFET |
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