参数资料
型号: APM2601CC-TR
厂商: Anpec Electronics Corporation
英文描述: P-Channel Enhancement Mode MOSFET
中文描述: P沟道增强型MOS管
文件页数: 7/9页
文件大小: 609K
代理商: APM2601CC-TR
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003
www.anpec.com.tw
7
APM2601
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
Classification Reflow Profiles
Convection or IR/ Convection
3
°
C/second max.
120 seconds max.
60 ~ 150 seconds
10 ~ 20 seconds
VPR
10
°
C /second max.
Average ramp-up rate(183
°
C to Peak)
Preheat temperature 125
±
25
°
C)
Temperature maintained above 183
°
C
Time within 5
°
C of actual peak
temperature
Peak temperature range
Ramp-down rate
Time 25
°
C to peak temperature
60 seconds
220 +5/-0
°
C or 235 +5/-0
°
C
6
°
C /second max.
6 minutes max.
215~ 219
°
C or 235 +5/-0
°
C
10
°
C /second max.
Package Reflow Conditions
pkg. thickness
2.5mm
and all bags
Convection
220 +5/-0
°
C
VPR 215-219
°
C
IR/Convection 220 +5/-0
°
C
pkg. thickness < 2.5mm and
pkg. volume
350 mm3
pkg. thickness < 2.5mm and pkg.
volume < 350mm3
Convection 235 +5/-0
°
C
VPR 235 +5/-0
°
C
IR/Convection 235 +5/-0
°
C
Pre-heat temperature
183 C
Peak temperature
Time
t
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