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参数资料
| 型号： | APM2700CCCTR |
| 厂商： | Anpec Electronics Corporation |
| 英文描述： | Dual enhancement Mode MOSFET |
| 中文描述： | 双增强型MOS管 |
| 文件页数： | 11/13页 |
| 文件大小： | 166K |
| 代理商： | APM2700CCCTR |
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Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
t 25 C to Peak
tp
Ramp-up
t
L
Ramp-down
ts
Preheat
Tsmax
Tsmin
T
L
T
P
25
T
Time
Critical Zone
T
L
to T
P
(
(IR/Convection or VPR Reflow)
(
"')
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Average ramp-up rate
(T
L
to T
P
)
Preheat
Temperature Min (Tsmin)
Temperature Max (Tsmax)
Time (min to max) (ts)
Time maintained above:
Temperature (T
L
)
Time (t
L
)
Peak/Classificatioon Temperature (Tp)
Time within 5
°
C of actual
Peak Temperature (tp)
Ramp-down Rate
Time 25
°
C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
3
°
C/second max.
3
°
C/second max.
100
°
C
150
°
C
60-120 seconds
150
°
C
200
°
C
60-180 seconds
183
°
C
60-150 seconds
217
°
C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6
°
C/second max.
6 minutes max.
6
°
C/second max.
8 minutes max.
相关PDF资料 |
PDF描述 |
|---|---|
| APM2700CCCTRL | Dual enhancement Mode MOSFET |
| APM2700CCCTU | Dual enhancement Mode MOSFET |
| APM2700CCCTUL | Dual enhancement Mode MOSFET |
| APM2701CG | Dual Enhancement Mode MOSFET (N and P-Channel) |
| APM2701CGC-TR | Dual Enhancement Mode MOSFET (N and P-Channel) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APM2700CCCTRL | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:Dual enhancement Mode MOSFET |
| APM2700CCCTU | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:Dual enhancement Mode MOSFET |
| APM2700CCCTUL | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:Dual enhancement Mode MOSFET |
| APM2701ACC-TRG | 制造商:SINOPOWER 功能描述:IC, N-Channel Enhancement Mode |
| APM2701CG | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:Dual Enhancement Mode MOSFET (N and P-Channel) |
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