参数资料
型号: APM2700CCCTU
厂商: Anpec Electronics Corporation
英文描述: Dual enhancement Mode MOSFET
中文描述: 双增强型MOS管
文件页数: 2/13页
文件大小: 166K
代理商: APM2700CCCTU
!
"#!$!%!&'(()
'
(T
A
= 25
°
C unless otherwise noted)
!"
(T
A
= 25
°
C unless otherwise noted)
Note:
*Surface Mounted on 1in
2
pad area, t
10sec.
Symbol
Parameter
N Channel
P Channel
Unit
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
Drain-Source Voltage
20
-20
Gate-Source Voltage
±8
±8
V
Continuous Drain Current
1.8
-1.2
300
μ
s Pulsed Drain Current
Diode Continuous Forward Current
V
GS
=±4.5V
6
-5
A
1
-1
A
T
J
T
STG
Maximum Junction Temperature
150
Storage Temperature Range
-55 to 150
°
C
T
A
=25
°
C
T
A
=100
°
C
0.83
0.3
P
D
*
Power Dissipation
W
R
θ
JA
*
Thermal Resistance-Junction to Ambient
150
°
C/W
APM2700C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
V
GS
=0V, I
DS
=250
μ
A
V
GS
=0V, I
DS
=-250
μ
A
V
DS
=16V, V
GS
=0V
N-Ch
20
BV
DSS
Drain-Source Breakdown
Voltage
P-Ch
-20
V
1
T
J
=85
°
C
N-Ch
30
V
DS
=-16V, V
GS
=0V
-1
I
DSS
Zero Gate Voltage Drain
Current
T
J
=85
°
C
P-Ch
-30
μ
A
V
DS
=V
GS
, I
DS
=250
μ
A
V
DS
=V
GS
, I
DS
=-250
μ
A
V
GS
=±8V, V
DS
=0V
V
GS
=±8V, V
DS
=0V
V
GS
=4.5V, I
DS
=1.8A
V
GS
=-4.5V, I
DS
=-1.2A
V
GS
=2.5V, I
DS
=0.9A
V
GS
=-2.5V, I
DS
=-0.7A
N-Ch
0.45
0.6
1.2
V
GS(th)
Gate Threshold Voltage
P-Ch
-0.45
-0.6
-1.2
V
N-Ch
±2
μ
A
nA
I
GSS
Gate Leakage Current
P-Ch
±100
N-Ch
170
220
P-Ch
360
470
N-Ch
270
350
R
DS(ON)
a
Drain-Source On-State
Resistance
P-Ch
530
690
m
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