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参数资料
| 型号： | APM2701CGC-TRL |
| 厂商： | Anpec Electronics Corporation |
| 英文描述： | Dual Enhancement Mode MOSFET (N and P-Channel) |
| 中文描述： | 双增强型MOS管（N和P沟道） |
| 文件页数： | 2/13页 |
| 文件大小： | 235K |
| 代理商： | APM2701CGC-TRL |
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
www.anpec.com.tw
2
APM2701CG
Absolute Maximum Ratings
(T
A
= 25
°
C unless otherwise noted)
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
Note:
*Surface Mounted on 1in
2
pad area, t
≤
10sec.
Symbol
Parameter
N Channel
P Channel
Unit
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
Drain-Source Voltage
20
-20
Gate-Source Voltage
±10
±10
V
Continuous Drain Current
3
-1.5
300
μ
s Pulsed Drain Current
Diode Continuous Forward Current
V
GS
=±4.5V
10
-6
A
1
-1
A
T
J
T
STG
Maximum Junction Temperature
150
Storage Temperature Range
-55 to 150
°C
T
A
=25°C
T
A
=100°C
0.83
0.3
P
D
*
Power Dissipation
W
R
θ
JA
*
Thermal Resistance-Junction to Ambient
150
°C/W
APM2701CG
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
V
GS
=0V, I
DS
=250
μ
A
V
GS
=0V, I
DS
=-250
μ
A
V
DS
=16V, V
GS
=0V
N-Ch
20
BV
DSS
Drain-Source Breakdown
Voltage
P-Ch
-20
V
1
T
J
=85°C
N-Ch
30
V
DS
=-16V, V
GS
=0V
-1
I
DSS
Zero Gate Voltage Drain
Current
T
J
=85°C
P-Ch
-30
μ
A
V
DS
=V
GS
, I
DS
=250
μ
A
V
DS
=V
GS
, I
DS
=-250
μ
A
N-Ch
0.45
0.6
1
V
GS(th)
Gate Threshold Voltage
P-Ch
-0.45
-0.6
-1
V
N-Ch
±100
I
GSS
Gate Leakage Current
V
GS
=±10V, V
DS
=0V
P-Ch
±100
nA
V
GS
=4.5V, I
DS
=3A
V
GS
=-4.5V, I
DS
=-1.5A
V
GS
=2.5V, I
DS
=1.7A
V
GS
=-2.5V, I
DS
=-1A
N-Ch
50
70
P-Ch
145
190
N-Ch
90
110
R
DS(ON)
a
Drain-Source On-State
Resistance
P-Ch
180
235
m
相关PDF资料 |
PDF描述 |
|---|---|
| APM2800B | N-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2800BC-TR | N-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2800BC-TRL | N-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2800BC-TU | N-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2800BC-TUL | N-Channel Enhancement Mode MOSFET with Schottky Diode |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APM2800B | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:N-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2800BC-TR | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:N-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2800BC-TRL | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:N-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2800BC-TU | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:N-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2800BC-TUL | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:N-Channel Enhancement Mode MOSFET with Schottky Diode |
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