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参数资料
| 型号： | APM2800B |
| 厂商： | Anpec Electronics Corporation |
| 英文描述： | N-Channel Enhancement Mode MOSFET with Schottky Diode |
| 中文描述： | N沟道增强型MOS管与肖特基二极管 |
| 文件页数： | 5/11页 |
| 文件大小： | 227K |
| 代理商： | APM2800B |
Copyright
ANPEC Electronics Corp.
Rev. B.3 - Jun., 2005
www.anpec.com.tw
5
APM2800B
R
D
-
)
Drain-Source On Resistance
I
D
- Drain Current (A)
T
j
- Junction Temperature (°C)
Gate Threshold Voltage
V
DS
- Drain - Source Voltage (V)
I
D
-
Output Characteristics
Transfer Characteristics
V
GS
- Gate - Source Voltage (V)
I
D
-
N
Typical Characteristics ( Cont.)
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
9
10
2.5V
2V
V
GS
= 3,4,5,6,7,8,9,10V
0
2
4
6
8
10
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
V
GS
=2.5V
V
GS
=4.5V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
1
2
3
4
5
6
7
8
9
10
T
j
=125
o
C
T
j
=25
o
C
T
j
=-55
o
C
-50
-25
0
25
50
75
100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
DS
=250
μ
A
相关PDF资料 |
PDF描述 |
|---|---|
| APM2800BC-TR | N-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2800BC-TRL | N-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2800BC-TU | N-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2800BC-TUL | N-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2801B | P-Channel Enhancement Mode MOSFET with Schottky Diode |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APM2800BC-TR | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:N-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2800BC-TRL | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:N-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2800BC-TU | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:N-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2800BC-TUL | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:N-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2801B | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:P-Channel Enhancement Mode MOSFET with Schottky Diode |
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