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参数资料
| 型号： | APM2800BC-TR |
| 厂商： | Anpec Electronics Corporation |
| 英文描述： | N-Channel Enhancement Mode MOSFET with Schottky Diode |
| 中文描述： | N沟道增强型MOS管与肖特基二极管 |
| 文件页数： | 6/11页 |
| 文件大小： | 227K |
| 代理商： | APM2800BC-TR |
Copyright
ANPEC Electronics Corp.
Rev. B.3 - Jun., 2005
www.anpec.com.tw
6
APM2800B
0
4
8
12
16
20
0
100
200
300
400
500
Frequency=1MHz
Crss
Coss
Ciss
V
DS
- Drain - Source Voltage (V)
Drain-Source On Resistance
N
T
j
- Junction Temperature (°C)
C
V
SD
- Source - Drain Voltage (V)
Source-Drain Diode Forward
I
S
Capacitance
Gate Charge
Q
G
- Gate Charge (nC)
V
G
Typical Characteristics ( Cont.)
-50
-25
0
25
50
75
100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
R
ON
@T
j
=25
o
C: 50m
V
GS
= 4.5V
I
DS
= 3A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1
10
T
j
=150
o
C
T
j
=25
o
C
0
1
2
3
4
5
6
0
1
2
3
4
5
V
DS
= 10V
I
DS
= 3A
相关PDF资料 |
PDF描述 |
|---|---|
| APM2800BC-TRL | N-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2800BC-TU | N-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2800BC-TUL | N-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2801B | P-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2801BC-TRL | P-Channel Enhancement Mode MOSFET with Schottky Diode |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APM2800BC-TRL | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:N-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2800BC-TU | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:N-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2800BC-TUL | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:N-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2801B | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:P-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2801BC-TR | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:P-Channel Enhancement Mode MOSFET with Schottky Diode |
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