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参数资料
| 型号： | APM2800BC-TUL |
| 厂商： | Anpec Electronics Corporation |
| 英文描述： | N-Channel Enhancement Mode MOSFET with Schottky Diode |
| 中文描述： | N沟道增强型MOS管与肖特基二极管 |
| 文件页数： | 2/11页 |
| 文件大小： | 227K |
| 代理商： | APM2800BC-TUL |
Copyright
ANPEC Electronics Corp.
Rev. B.3 - Jun., 2005
www.anpec.com.tw
2
APM2800B
Absolute Maximum Rating s
(T
A
= 25
°
C unless otherwise noted)
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
Rating
Unit
[MOSFET]
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
Drain-Source Voltage
20
Gate-Source Voltage
±10
V
Continuous Drain Current
300
μ
s Pulsed Drain Current
Diode Continuous Forward Current
3
V
GS
=4.5V
10
A
1
A
T
J
T
STG
Maximum Junction Temperature
150
Storage Temperature Range
-55 to 150
°C
T
A
=25°C
T
A
=100°C
0.83
0.3
P
D
*
Maximum Power Dissipation
W
R
θ
JA
*
Thermal Resistance-Junction to Ambient
150
°C/W
[SBD]
V
RRM
I
FSM
Repetitive Peak Reverse Voltage
20
V
A
Maximum Peak Forward Surge Current
5.5
Note:
*Surface Mounted on 1in
2
pad area, t
≤
10sec.
APM2800B
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
[MOSFET]
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
DS
=250
μ
A
20
V
V
DS
=16V, V
GS
=0V
1
I
DSS
Zero Gate Voltage Drain Current
T
J
=85°C
30
μ
A
V
GS(th)
I
GSS
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=250
μ
A
V
GS
=±10V, V
DS
=0V
V
GS
=4.5V, I
DS
=3A
0.45
0.6
1
V
Gate Leakage Current
±100
nA
50
70
R
DS(ON)
a
Drain-Source On-state Resistance V
GS
=2.5V, I
DS
=1.7A
Diode Forward Voltage
90
110
m
V
SD
a
I
SD
=0.5A, V
GS
=0V
0.7
1.3
V
相关PDF资料 |
PDF描述 |
|---|---|
| APM2801B | P-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2801BC-TRL | P-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2801BC-TU | P-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2801BC-TUL | P-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2801BC-TR | P-Channel Enhancement Mode MOSFET with Schottky Diode |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APM2801B | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:P-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2801BC-TR | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:P-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2801BC-TRL | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:P-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2801BC-TU | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:P-Channel Enhancement Mode MOSFET with Schottky Diode |
| APM2801BC-TUL | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:P-Channel Enhancement Mode MOSFET with Schottky Diode |
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