参数资料
型号: APM3007NUC-TR
厂商: Anpec Electronics Corporation
英文描述: N-Channel Enhancement Mode MOSFET
中文描述: N沟道增强型MOS管
文件页数: 3/11页
文件大小: 208K
代理商: APM3007NUC-TR
Copyright
ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
www.anpec.com.tw
3
APM3007NU
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
APM3007NU
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Drain-Source Avalanche Ratings
E
AS
Avalanche Energy, Single Pulsed
I
D
=11A, V
DD
=15V
30
mJ
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
DS
=250
μ
A
V
DS
=24V, V
GS
=0V
30
V
1
I
DSS
Zero Gate Voltage Drain Current
T
J
=85°C
30
μ
A
V
GS(th)
I
GSS
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=250
μ
A
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=40A
V
GS
=4.5V, I
DS
=20A
1
1.5
2
V
Gate Leakage Current
±100
nA
5.5
7
R
DS(ON)
a
Drain-Source On-state Resistance
8.5
10
m
Diode Characteristics
V
SD
Diode Forward Voltage
a
I
SD
=15A, V
GS
=0V
0.8
1.3
V
Dynamic
Characteristics
b
R
G
Gate Resistance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
t
d(ON)
Turn-on Delay Time
T
r
Turn-on Rise Time
t
d(OFF)
Turn-off Delay Time
T
f
Turn-off Fall Time
V
GS
=0V,V
DS
=0V,F=1MHz
1.1
2440
420
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
250
pF
13
20
9
15
43
66
V
DD
=15V, R
L
=15
,
I
DS
=1A, V
GEN
=10V,
R
G
=6
14
28
ns
Gate Charge
Characteristics
b
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
Notes:
a : Pulse test ; pulse width
300
μ
s, duty cycle
2%.
b : Guaranteed by design, not subject to production testing.
53
70
13
V
DS
=15V, V
GS
=10V,
I
DS
=40A
10
nC
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