参数资料
型号: APM3009NUC
厂商: Anpec Electronics Corporation
英文描述: N-Channel Enhancement Mode MOSFET
中文描述: N沟道增强型MOS管
文件页数: 2/12页
文件大小: 716K
代理商: APM3009NUC
Copyright
ANPEC Electronics Corp.
Rev. A.3 - May., 2002
APM3009N
www.anpec.com.tw
2
Notes
a
: Pulse test ; pulse width
300
μ
s, duty cycle
2
%
b
: Guaranteed by design, not subject to production testing
APM3009N
Typ.
Symbol
Parameter
Test Condition
Min.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
V lt
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
V
GS
=0V, I
DS
=250
μ
A
30
V
I
DSS
V
DS
=24V , V
GS
=0V
1
μ
A
V
GS(th)
I
GSS
V
DS
=V
GS
, I
DS
=250
μ
A
V
GS
=
±
20V, V
DS
=0V
V
GS
=10V, I
DS
=35A
V
GS
=4.5V, I
DS
=20A
I
SD
=35A, V
GS
=0V
1
3
V
nA
±
100
9
15
1.3
7
11
R
DS(ON)
a
Resistance
Diode Forward Voltage
m
V
SD
a
0.6
V
Dynamic
b
Q
g
Q
gs
Q
gd
t
d(ON)
T
r
t
d(OFF)
T
f
C
iss
C
oss
C
rss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
22
12.8
5
10
7
35
10
2400
500
240
28
V
DS
=15V, I
DS
=20A
V
GS
=4.5V,
nC
15
13
50
20
V
DD
=15V, I
DS
=1A,
V
GEN
=10V, R
G
= 0.2
ns
V
GS
=0V
V
DS
=15V
Frequency =1.0MHz
pF
Symbol
Parameter
Rating
Unit
TO-252
50
T
A
=25
°
C
TO-263
62.5
TO-252
20
P
D
Maximum Power Dissipation
T
A
=100
°
C
TO-263
25
W
T
J
,T
STG
Maximum Operating and Storage Junction Temperature
-55 to 150
°
C
TO-252
50
R
θ
JA
Thermal Resistance – Junction to Ambient
TO-263
60
°
C/W
TO-252
2.5
R
θ
JC
Thermal Resistance – Junction to Case
TO-263
2
°
C/W
Absolute Maximum Ratings Cont.
(T
A
= 25
°
C unless otherwise noted)
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
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