参数资料
型号: APM3095P
厂商: Anpec Electronics Corporation
英文描述: P-Channel Enhancement Mode MOSFET
中文描述: P沟道增强型MOS管
文件页数: 2/9页
文件大小: 140K
代理商: APM3095P
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
www.anpec.com.tw
2
APM3095P
Notes
a
: Pulse test ; pulse width
300
μ
s, duty cycle
2
%
b
: Guaranteed by design, not subject to production testing
Absolute Maximum Ratings Cont.
(T
A
= 25
°
C unless otherwise noted)
Symbol
P
D
Parameter
Rating
50
Unit
T
A
=25
°
C
Maximum Power Dissipation
T
A
=100
°
C
20
W
T
J
Maximum Junction Temperature
150
°
C
T
STG
R
θ
jA
Storage Temperature Range
-55 to 150
°
C
Thermal Resistance – Junction to Ambient
50
°
C/W
APM3095P
Typ.
Symbol
Parameter
Test Condition
Min.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
V
GS
=0V , I
DS
=-250
μ
A
-30
V
I
DSS
V
GS(th)
I
GSS
V
DS
=-24V , V
GS
=0V
-1
μ
A
V
DS
=V
GS
, I
DS
=-250
μ
A
V
GS
=
±
25V , V
DS
=0V
V
GS
=-10V , I
DS
=-6A
-1
-1.5
-2
V
nA
±
100
110
95
R
DS(ON)
a
Drain-Source On-state
Resistance
V
GS
=-4.5V , I
DS
=-3A
I
SD
=-1.25A , V
GS
=0V
140
160
m
V
SD
a
Diode Forward Voltage
-0.7
-1.3
V
Dynamic
b
Q
g
Q
gs
Q
gd
t
d(ON)
T
r
t
d(OFF)
T
f
C
iss
C
oss
C
rss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
8
13
1.9
1.1
10
8
25
5
550
120
75
V
DS
=-15V , I
DS
=-3A
V
GS
=-10V
nC
20
20
50
15
V
DD
=-15V , I
DS
=-1A ,
V
GEN
=-10V , R
G
=6
R
L
=15
ns
V
GS
=0V
V
DS
=-25V
Frequency=1.0MHz
pF
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
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