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参数资料
| 型号： | APM3195PUC-TUL |
| 厂商： | Anpec Electronics Corporation |
| 英文描述： | P-Channel Enhancement Mode MOSFET |
| 中文描述： | P沟道增强型MOS管 |
| 文件页数： | 3/10页 |
| 文件大小： | 188K |
| 代理商： | APM3195PUC-TUL |
Copyright
ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
www.anpec.com.tw
3
APM3195PU
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
APM3195PU
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
DS
=-250
μ
A
V
DS
=-24V, V
GS
=0V
V
DS
=V
GS
, I
DS
=-250
μ
A
V
GS
=±20V, V
DS
=0V
V
GS
=-10V, I
DS
=-4A
V
GS
=-4.5V, I
DS
=-3A
-30
V
-1
I
DSS
Zero Gate Voltage Drain Current
T
J
=85
°
C
-30
μ
A
V
GS(th)
I
GSS
Gate Threshold Voltage
-1
-1.5
-2
V
Gate Leakage Current
±100
nA
100
240
R
DS(ON)
a
Drain-Source On-state Resistance
170
460
m
Diode Characteristics
V
SD
Diode Forward Voltage
a
I
SD
=-0.5A, V
GS
=0V
-0.8
-1.3
V
Dynamic Characteristics
b
R
G
Gate Resistance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
t
d(ON)
Turn-on Delay Time
T
r
Turn-on Rise Time
t
d(OFF)
Turn-off Delay Time
T
f
Turn-off Fall Time
V
GS
=0V,V
DS
=0V,F=1MHz
11
510
70
V
GS
=0V
V
DS
=-25V
Frequency=1.0MHz
36
pF
10
20
8
20
25
50
V
DD
=-15V, R
L
=15
,
I
DS
=-1A, V
GEN
=-10V,
R
G
=6
5
15
ns
Gate Charge Characteristics
b
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
Notes:
a : Pulse test ; pulse width
≤
300
μ
s, duty cycle
≤
2%.
b : Guaranteed by design, not subject to production testing.
8.1
10.5
2
V
DS
=-15V, V
GS
=-10V,
I
DS
=-4A
1.1
nC
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