参数资料
型号: APM4408
厂商: Anpec Electronics Corporation
英文描述: N-Channel Enhancement Mode MOSFET
中文描述: N沟道增强型MOS管
文件页数: 2/9页
文件大小: 120K
代理商: APM4408
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002
APM4408
www.anpec.com.tw
2
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
Absolute Maximum Ratings Cont.
(T
A
= 25
°
C unless otherwise noted)
Symbol
P
D
Parameter
Rating
1.6
Unit
T
A
=25
°
C
Maximum Power Dissipation
T
A
=100
°
C
0.625
W
T
J
Maximum Junction Temperature
150
°
C
T
STG
R
θ
JA
Storage Temperature Range
-55 to 150
°
C
Thermal Resistance – Junction to Ambient
80
°
C/W
APM4408
Typ.
Symbol
Parameter
Test Condition
Min.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V , I
DS
=250
μ
A
20
V
I
DSS
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
V
DS
=18V , V
GS
=0V
1
μ
A
V
GS(th)
I
GSS
V
DS
=V
GS
, I
DS
=250
μ
A
V
GS
=
±
16V , V
DS
=0V
V
GS
=10V , I
DS
=21A
0.8
1.5
±
100
4.5
V
nA
3.5
V
GS
=4.5V , I
DS
=17A
5
6
R
DS(ON)
a
Drain-Source On-state
Resistance
V
GS
=2.5V , I
DS
=10A
I
SD
=2.9A , V
GS
=0V
8
10
1.3
m
V
SD
a
Diode Forward Voltage
0.6
V
Dynamic
b
Q
g
Q
gs
Q
gd
t
d(ON)
T
r
t
d(OFF)
T
f
C
iss
C
oss
C
rss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
45
20
17
35
19
110
60
5300
1000
300
65
V
DS
=10V , I
DS
= 21A
V
GS
=4.5V ,
nC
50
28
170
75
V
DD
=10V , I
DS
=1A ,
V
GEN
=4.5V , R
G
=6
ns
V
GS
=0V
V
DS
=15V
Frequency=1.0MHz
pF
Notes
a
: Guaranteed by design, not subject to production testing
b
: Pulse test ; pulse width
300
μ
s, duty cycle
2%
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