参数资料
型号: APM9966COC-TU
厂商: Anpec Electronics Corporation
英文描述: Dual N-Channel Enhancement Mode MOSFET
中文描述: 双N沟道增强型MOS管
文件页数: 2/10页
文件大小: 134K
代理商: APM9966COC-TU
!"#$%&&'
%
(T
A
= 25
°
C unless otherwise noted)
!
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
Rating
Unit
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
Drain-Source Voltage
20
Gate-Source Voltage
±10
V
Continuous Drain Current
6
300
μ
s Pulsed Drain Current
Diode Continuous Forward Current
V
GS
=4.5V
20
A
1.7
A
T
J
T
STG
Maximum Junction Temperature
150
Storage Temperature Range
-55 to 150
°
C
T
A
=25
°
C
T
A
=100
°
C
1.25
0.5
P
D
*
Maximum Power Dissipation
W
R
θ
JA
*
Thermal Resistance-Junction to Ambient
100
°
C/W
Note:
*Surface Mounted on 1in
2
pad area, t
10sec.
APM9966CO
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
DS
=250
μ
A
V
DS
=16V, V
GS
=0V
20
V
1
I
DSS
Zero Gate Voltage Drain Current
T
J
=85
°
C
30
μ
A
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
V
DS
=V
GS
, I
DS
=250
μ
A
V
GS
=±10V, V
DS
=0V
V
GS
=4.5V, I
DS
=6A
V
GS
=2.5V, I
DS
=5.2A
I
SD
=1.7A, V
GS
=0V
0.45
0.6
1
V
±100
nA
20
24
R
DS(ON)
a
Drain-Source On-state Resistance
25
30
m
V
SD
a
Diode Forward Voltage
0.8
1.3
V
Gate Charge Characteristics
b
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
21.7
28
8.5
V
DS
=10V, V
GS
=4.5V,
I
DS
=6A
2.1
nC
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