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参数资料
| 型号： | APT1001R1AVR |
| 元件分类： | JFETs |
| 英文描述： | 9 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE |
| 封装： | TO-3, 2 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 60K |
| 代理商： | APT1001R1AVR |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
1
5
10
50 100
500 1000
.01
.1
1
10
50
0
50
100
150
200
250
300
0.2
0.4
0.6
0.8
1.0
1.2
APT1001R1AVR
TC =+25°C
TJ =+150°C
SINGLE PULSE
40
10
5
1
.5
.1
20
16
12
8
4
0
11,000
5,000
1,000
500
100
50
10
5
1
.5
.1
050-5833
Rev
B
9-2001
OPERATION HERE
LIMITED BY RDS (ON)
10s
TJ =+150°C
TJ =+25°C
Crss
Coss
Ciss
VDS=200V
VDS=100V
VDS=500V
1ms
10ms
100ms
DC
100s
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
I
D
= I
D
[Cont.]
TO-3 (TO-204AE) Package Outline
22.23 (.875) Max.
6.35 (.250)
9.15 (.360)
Drain
(Case)
Source
Dimensions in Millimeters and (Inches)
Seating
Plane
11.18 (.440)
12.19 (.480)
1.52 (.060)
3.43 (.135)
1.47 (.058)
1.60 (.063)
(2-Places)
16.64 (.655)
17.15 (.675)
29.90 (1.177)
30.40 (1.197)
38.61 (1.52)
39.12 (1.54)
25.15 (0.990)
26.67 (1.050)
10.67 (.420)
11.18 (.440)
5.21 (.205)
5.72 (.225)
3.84 (.151)
4.09 (.161)
(2-Places)
Gate
相关PDF资料 |
PDF描述 |
|---|---|
| APT1001R1BNR-GULLWING | 10.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT1001RBNR-GULLWING | 11 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT1001R1BNR-BUTT | 10.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT1001RBNR-BUTT | 11 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT1001R1BNR | 10.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT1001R1BN | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT1001R1BNR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-247AD |
| APT1001R1BVFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT1001R1DN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP |
| APT1001R1HN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO |
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