参数资料
型号: APT1001R1BN-BUTT
元件分类: JFETs
英文描述: 10.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件页数: 1/4页
文件大小: 160K
代理商: APT1001R1BN-BUTT
相关PDF资料
PDF描述
APT901R3BN-GULLWING 10 A, 900 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT1001R1BN-GULLWING 10.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT1001R6BFLL 8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT1001R6BFLLG 8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT1001R6SFLLG 8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
APT1001R1BNR 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-247AD
APT1001R1BVFR 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT1001R1DN 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
APT1001R1HN 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
APT1001R1HVR 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.