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参数资料
| 型号： | APT1001R1BN |
| 元件分类： | JFETs |
| 英文描述： | 10.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 文件页数： | 3/4页 |
| 文件大小： | 52K |
| 代理商： | APT1001R1BN |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (
°C)
T
J
, JUNCTION TEMPERATURE (
°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (
°C)
T
C
, CASE TEMPERATURE (
°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
BV
DSS
(ON),
DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
050-0007
Rev
C
16
12
8
4
0
2.5
2.0
1.5
1.0
0.5
0.0
0
6
12
18
24
30
0
100
200
300
400
500
T
J
= 25
°C
2
SEC. PULSE TEST
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
0
2
4
6
8
0
4
8
12
16
20
DS
D
DS
V
> I (ON) x R
(ON)MAX.
230
SEC. PULSE TEST
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
APT1001R1/1001R3BN
20
16
12
8
4
0
16
12
8
4
0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
0.7
1.4
1.2
1.0
0.8
0.6
0.4
T
J
= -55
°C
T
J
= +125
°C
T
J
= +25
°C
T
J
= -55
°C
T
J
= +25
°C
T
J
= +125
°C
4V
4.5V
5V
5.5V
V
GS
=10V
6V
4V
4.5V
5V
5.5V
6V
V
GS
=10V
V
GS
=20V
V
GS
=10V
12
10
8
6
4
2
0
25
50
75
100
125
150
APT1001R3BN
APT1001R1BN
相关PDF资料 |
PDF描述 |
|---|---|
| APT1001R3BN | 10 A, 1000 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT1001R1HVR | 8.4 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA |
| APT1001R1SN | 10.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT1001R3BN-BUTT | 10 A, 1000 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT1001R3BN-GULLWING | 10 A, 1000 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT1001R1BNR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-247AD |
| APT1001R1BVFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT1001R1DN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP |
| APT1001R1HN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO |
| APT1001R1HVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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