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参数资料
| 型号： | APT1001R6BN |
| 厂商： | Advanced Power Technology Ltd. |
| 元件分类： | 圆形连接器 |
| 英文描述： | Circular Connector; No. of Contacts:56; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No |
| 中文描述： | N沟道增强型高压功率MOSFET |
| 文件页数： | 3/4页 |
| 文件大小： | 50K |
| 代理商： | APT1001R6BN |
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
I
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
, CASE TEMPERATURE (
°
C)
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
D
(
-25
0
25
50
-50
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
T
, CASE TEMPERATURE (
°
C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
I
D
,
I
D
,
I
D
,
(
V
G
(
B
D
(
R
D
(
I
D
,
(
V
0
-50 -25 0 25 50 75 100 125 150
1.4
1.2
1.0
0.8
0.6
0.4
μ
SEC. PULSE TEST
VD230
2.5
00
2
4
6
8
8
16
12
20
0.7
0.9
0.8
1.0
1.1
1.2
0
0
-25
0
25
50
75
100
125 150
-50
75
100 125 150
0.0
2.5
2.0
1.5
1.0
0.5
200
300
400
500
100
0
0
2.0
1.5
1.0
0.5
0.0
4V
10
2
4
6
8
2
4
8
6
4
4
0
12
16
TJ
°
C
TJ
°
C
J
°
C
J
°
C
TJ
°
C
J
°
C
GS
GS
8
4.5V
5V
GS
6V
5.5V
2
4
6
8
12
4.5V
4V
GS
5V
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
T
J
= 25
°
C
2
μ
SEC. PULSE TEST
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
APT1001R6BN
25
50
75
100
125
150
0
2
4
6
8
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT1001R6SFLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 R FREDFET |
| APT1001R6SFLLG | 功能描述:MOSFET N-CH 1000V 8A D3PAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT1001RAN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3 |
| APT1001RBLC | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs |
| APT1001RBN | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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