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参数资料
| 型号： | APT1001R6BN |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 文件页数： | 3/4页 |
| 文件大小： | 50K |
| 代理商： | APT1001R6BN |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (
°C)
T
J
, JUNCTION TEMPERATURE (
°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (
°C)
T
C
, CASE TEMPERATURE (
°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
BV
DSS
(ON),
DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
050-0109
Rev
B
-50
-25
0
25
50
75
100 125 150
1.4
1.2
1.0
0.8
0.6
0.4
DS
D
DS
V
> I (ON) x R
(ON)MAX.
230
SEC. PULSE TEST
2.5
0
2
4
68
8
16
12
20
0.7
0.9
0.8
1.0
1.1
1.2
0
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
0.0
2.5
2.0
1.5
1.0
0.5
200
300
400
500
100
0
2.0
1.5
1.0
0.5
0.0
4V
2
4
6
8
2
4
8
6
4
0
12
16
J
T =+125
°C
T =+25
°C
J
T =-55
°C
J
T =-55
°C
J
T =+25
°C
J
T =+125
°C
GS
V
=20V
V
=10V
GS
8
4.5V
5V
V
=10V
GS
5.5V
6V
2
4
6
8
10
12
4.5V
4V
V
=5.5, 6 & 10V
GS
5V
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
T
J
= 25
°C
2
SEC. PULSE TEST
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
APT1001R6BN
25
50
75
100
125
150
0
2
4
6
8
相关PDF资料 |
PDF描述 |
|---|---|
| APT1001R6SLL | 8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT1001R6BLL | 8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT1001RBN-BUTT | 11 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT901RBN-GULLWING | 11 A, 900 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT1001RBN-GULLWING | 11 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT1001R6SFLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 R FREDFET |
| APT1001R6SFLLG | 功能描述:MOSFET N-CH 1000V 8A D3PAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT1001RAN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3 |
| APT1001RBLC | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs |
| APT1001RBN | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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