参数资料
型号: APT1001RSVRG
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: JFETs
英文描述: 11 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: D3PAK-3
文件页数: 4/4页
文件大小: 71K
代理商: APT1001RSVRG
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
1
5
10
50 100
500
.01
.1
1
10
50
0
50
100
150
200
250
300
0.2
0.4
0.6
0.8
1.0
1.2
APT1001RSVR
TC =+25°C
TJ =+150°C
SINGLE PULSE
50
10
5
1
.5
.1
20
16
12
8
4
0
11,000
5,000
1,000
500
100
50
10
5
1
.5
.1
050-5578
Rev
B
OPERATION HERE
LIMITED BY RDS (ON)
10
S
TJ =+150°C
TJ =+25°C
Crss
Coss
Ciss
VDS=200V
VDS=100V
VDS=500V
1mS
10mS
100mS
DC
100
S
I
D
= I
D
[Cont.]
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
15.95 (.628)
16.05 (.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
{3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Drain
(Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
Revised
4/18/95
D
3
PAK Package Outline
相关PDF资料
PDF描述
APT10021JLL 37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET
APT10021JLL 37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET
APT10025JFLC 34 A, 1000 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
APT10025JVFR 34 A, 1000 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
APT10025JVR 34 A, 1000 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
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