型号: | APT1002RBN-BUTT |
元件分类: | JFETs |
英文描述: | 7 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
文件页数: | 4/4页 |
文件大小: | 157K |
代理商: | APT1002RBN-BUTT |
相关PDF资料 |
PDF描述 |
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APT902R4BN-BUTT | 6.5 A, 900 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
APT902R4BN-GULLWING | 6.5 A, 900 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
APT1002RBN-GULLWING | 7 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
APT1002R4BN-BUTT | 6.5 A, 1000 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
APT1002R4BNR-BUTT | 6.5 A, 1000 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相关代理商/技术参数 |
参数描述 |
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APT1002RBNR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 7A I(D) | TO-247AD |
APT1002RCN | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
APT1002RDN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP |
APT10030L2VFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
APT10030L2VFR_04 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |