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参数资料
| 型号： | APT1002RCN |
| 元件分类： | JFETs |
| 英文描述： | 5.5 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封装： | TO-254AA, 3 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 133K |
| 代理商： | APT1002RCN |
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
TO-254AA Package Outline
I
D = ID [Cont.]
OPERATION HERE
LIMITED BY RDS (ON)
APT1002RCN
VDS=100V
VDS=200V
VDS=500V
TJ =+150°C
TJ =+25°C
Crss
Coss
Ciss
10S
100S
1mS
10mS
100mS
DC
TC =+25°C
TJ =+150°C
SINGLE PULSE
10,000
1,000
100
10
100
50
20
10
5
2
1
5
10
50 100
500 1000
0
10
20
30
40
50
0
20
40
60
80
100
0
0.5
1.0
1.5
2.0
3.81 (.150) BSC
1.14 (.045)
.89 (.035)
Dia. Typ.
3 Leads
13.84 (.545)
13.59 (.535)
31.37 (1.235)
30.35 (1.195)
13.84 (.545)
13.59 (.535)
3.78 (.149)
3.53 (.139)
1.27 (.050)
1.02 (.040)
6.60 (.260)
6.32 (.249)
3.81 (.150) BSC
6.91 (.272)
6.81 (.268)
Drain
Source
Gate
Dia.
20.32 (.800)
20.06 (.790)
17.40 (.685)
16.89 (.665)
Dimensions in Millimeters and (Inches)
050-0015
Rev
B
30
10
5
1
0.5
0.1
20
16
12
8
4
0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT1002RDN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP |
| APT10030L2VFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10030L2VFR_04 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10030L2VFRG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS5 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR |
| APT10030L2VR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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