型号: | APT10030L2VR |
厂商: | Advanced Power Technology Ltd. |
英文描述: | LJT 19C 19#12 SKT WALL RECP |
中文描述: | 电源MOS V是一个高电压N新一代通道增强型功率MOSFET。 |
文件页数: | 1/2页 |
文件大小: | 79K |
代理商: | APT10030L2VR |
相关PDF资料 |
PDF描述 |
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APT1004R2BN | Circular Connector; No. of Contacts:32; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:18; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:18-32 |
APT1004R2KN | Circular Connector; No. of Contacts:32; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:18; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:18-32 |
APT100GF60B2R | The Fast IGBT is a new generation of high voltage power IGBTs. |
APT100GF60JR | The Fast IGBT is a new generation of high voltage power IGBTs. |
APT100GF60JRD | The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
相关代理商/技术参数 |
参数描述 |
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APT10030L2VR_04 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
APT10030L2VRG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS5 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
APT10035B2FLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
APT10035B2FLL_03 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
APT10035B2FLLG | 功能描述:MOSFET N-CH 1000V 28A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |