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参数资料
| 型号： | APT1003RKFLL |
| 元件分类： | JFETs |
| 英文描述： | 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 96K |
| 代理商： | APT1003RKFLL |
050-7111
Rev
A
11-2004
APT1003RKFLL
TJ=+150°C
TJ =+25°C
Crss
Ciss
Coss
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
1000
0
10
20
30
40
50
0
5
10
15
20
25
30
35 40
45 50
0.3
0.5
0.7
0.9
1.1
1.3
1.5
16
10
5
1
.5
.1
16
12
8
4
0
TC=+25°C
TJ =+150°C
SINGLE PULSE
10mS
1mS
100S
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 667V
R
G
= 5
T
J
= 125°C
L = 100H
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t r
and
t
f
(ns)
0
12345678
0
1
23
45678
0
1234567
8
0
5
10
15
20
25
30
35 40
45
50
V
DD
= 667V
I
D
= 4A
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
VDS=500V
VDS=200V
VDS=800V
I
D
= 4A
td(on)
td(off)
Eon
Eoff
25
20
15
10
5
0
90
80
70
60
50
40
30
20
10
0
V
DD
= 667V
R
G
= 5
T
J
= 125°C
L = 100H
V
DD
= 667V
R
G
= 5
T
J
= 125°C
L = 100H
E
ON includes
diode reverse recovery.
4,000
1,000
100
10
100
10
1
OPERATIONHERE
LIMITEDBYRDS(ON)
70
60
50
40
30
20
10
0
140
120
100
80
60
40
20
0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT1003RKFLLG | 功能描述:MOSFET N-CH 1000V 4A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT1003RKLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 MOSFET |
| APT1003RKLLG | 功能描述:MOSFET N-CH 1000V 4A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT1003RSFLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT1003RSFLLG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS7 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR |
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