型号: | APT10043JVR |
元件分类: | JFETs |
英文描述: | 22 A, 1000 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET |
封装: | ISOTOP-4 |
文件页数: | 1/4页 |
文件大小: | 73K |
代理商: | APT10043JVR |
相关PDF资料 |
PDF描述 |
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APT10045JLL | 21 A, 1000 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
APT10050JN | 20.5 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
APT10078HLL | 12 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA |
APT10086BFLC | 13 A, 1000 V, 0.86 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
APT100GN120J | 153 A, 1200 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
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APT10045B2FLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
APT10045B2FLL_03 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
APT10045B2FLLG | 功能描述:MOSFET N-CH 1000V 23A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
APT10045B2LL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
APT10045B2LL_03 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |