参数资料
型号: APT1004R2KN
元件分类: JFETs
英文描述: 3.5 A, 1000 V, 4.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件页数: 4/4页
文件大小: 51K
代理商: APT1004R2KN
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
SD
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
C,
CAPACITANCE
(pF)
I
,
REVERSE
DRAIN
CURRENT
(AMPERES)
DR
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Q , TOTAL GATE CHARGE (nC)
g
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
I
,
DRAIN
CURRENT
(AMPERES)
D
V
,
GATE-TO-SOURCE
VOLTAGE
(VOLTS)
GS
Source
10.67 (.420)
9.65 (.380)
5.33 (.210)
4.83 (.190)
14.73 (.580)
12.70 (.500)
1.14 (.045) 3-Plcs.
0.51 (.020)
2.29 (.090)
2.79 (.110)
4.83 (.190)
3.56 (.140)
1.40 (.020)
0.51 (.055)
4.09 (.161) Dia.
3.53 (.139)
Dimensions in Millimeters and (Inches)
16.51 (.650)
14.22 (.560)
6.35 (.250)
MAX.
Gate
Drain
6.86 (.270)
5.84 (.230)
1.78 (.070) 3-Plcs.
1.14 (.045)
2.92 (.115)
2.03 (.080)
3.43 (.135)
2.54 (.100)
1.14 (.045)
0.30 (.012)
4.83 (.190)
5.33 (.210)
Drain
0
.5
1.0
1.5
2.0
0
10
20
30
40
50
100
TO-220AB Package Outline
0
8
4
12
16
20
10
S
100
S
100mS
10mS
1mS
DC
10
.1
1
60
1
5
10
50 100
1000
10
1,000
10,000
C
oss
C
iss
C
rss
T
J
= +150
°C
T
J
= +25
°C
V
DS
=500V
V
DS
=200V
V
DS
=100V
1
2
5
10
20
50
100
0
10
20
30
40
50
T
C
=+25
°C
T
J
=+150
°C
SINGLE PULSE
APT1004RKN
APT1004R2KN
OPERATION HERE
LIMITED BY R
DS
(ON)
APT1004RKN
APT1004R/1004R2KN
050-0036
Rev
C
I
D
= I
D
[Cont.]
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相关代理商/技术参数
参数描述
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