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参数资料
| 型号： | APT10M25SVR |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs |
| 中文描述： | 电源MOS V是一个高电压N新一代通道增强型功率MOSFET |
| 文件页数： | 4/4页 |
| 文件大小： | 68K |
| 代理商： | APT10M25SVR |
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
V
G
,
I
D
,
I
D
,
C
1
5
10
50
100
.01
.1
1
10
50
0
50
100
150
200
250
300
0
0.4
0.8
1.2
1.6
2.0
APT10M25SVR
0
TC =+25
°
C
TJ =+150
°
C
SINGLE PULSE
400
100
50
10
5
1
20
16
12
8
4
0
OPERATION HERE
LIMITED BY R
DS
(ON)
Crss
Coss
Ciss
100
μ
S
10mS
100mS
DC
1mS
TJ =+150
°
C
TJ =+25
°
C
Coss
Ciss
VDS=50V
VDS=20V
VDS=80V
I
D
= I
D
[Cont.]
15,000
10,000
5,000
1,000
500
100
200
100
50
10
5
1
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
5,256,583
15.95 (.628)
16.05 (.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
{3 Plcs}
0.56 (.022)
0.020 (.001)
0.178 (.007)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
D
(
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
Revised
4/18/95
D
3
PAK Package Outline
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT10M25SVRG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS5 - Rail/Tube |
| APT10M30AVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10M30BNFR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 75A I(D) | TO-247AD |
| APT10M30BNR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 75A I(D) | TO-247AD |
| APT10SCD120B | 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 1.2KV 36A TO247 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE DIODE 制造商:Microsemi 功能描述:Diode Switching 1.2KV 37A |
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