参数资料
型号: APT1101RSFLLG
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: JFETs
英文描述: 13 A, 1100 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: D3PAK-3
文件页数: 4/5页
文件大小: 105K
代理商: APT1101RSFLLG
2SJ546
Rev.3.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–15
A
Drain peak current
ID (pulse)
Note 1
–60
A
Body to drain diode reverse drain current
IDR
–15
A
Avalanche current
IAP
Note 3
–15
A
Avalanche energy
EAR
Note 3
19
mJ
Channel dissipation
Pch
Note 2
30
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–60
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
V
IG =
±100 A, VDS = 0
Zero gate voltage drain current
IDSS
–10
A
VDS = –60 V, VGS = 0
Gate to source leak current
IGSS
±10
A
VGS =
±16 V, VDS = 0
Gate to source cutoff voltage
VGS (off)
–1.0
–2.0
V
ID = –1 mA, VDS = –10 V
RDS (on)
0.075
0.095
ID = –8 A, VGS = –10 V
Note 4
Static drain to source on state resistance
RDS (on)
0.105
0.155
ID = –8 A, VGS = –4 V
Note 4
Forward transfer admittance
|yfs|
6.5
11
S
ID = –8 A, VDS = –10 V
Note 4
Input capacitance
Ciss
850
pF
Output capacitance
Coss
420
pF
Reverse transfer capacitance
Crss
110
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
12
ns
Rise time
tr
75
ns
Turn-off delay time
td (off)
125
ns
Fall time
tf
75
ns
VGS = –10 V
ID = –8 A
RL = 3.75
Body to drain diode forward voltage
VDF
–1.1
V
IF = –15 A, VGS = 0
Body to drain diode reverse recovery time
trr
70
ns
IF = –15 A, VGS = 0
diF/dt = 50 A/
s
Note:
4. Pulse test
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