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参数资料
| 型号： | APT11044JFLL |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 22 A, 1100 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ISOTOP-4 |
| 文件页数： | 1/5页 |
| 文件大小： | 102K |
| 代理商： | APT11044JFLL |
050-7179
Rev
A
11-2003
APT11044JFLL
1100V 22A 0.440
G
D
S
SOT-227
G
S
D
ISOTOP
"UL Recognized"
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
Popular SOT-227 Package
FAST RECOVERY BODY DIODE
Power MOS 7
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
by significantly lowering R
DS(ON)
and Q
g. Power MOS 7
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
POWER MOS 7
R
FREDFET
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250A)
Drain-Source On-State Resistance 2
(V
GS
= 10V, 11A)
Zero Gate Voltage Drain Current (V
DS
= 1100V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 880V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
1100
0.440
250
1000
±100
35
APT11044JFLL
1100
22
88
±30
±40
521
4.17
-55 to 150
300
22
50
3000
相关PDF资料 |
PDF描述 |
|---|---|
| APT11044LFLL | 26 A, 1100 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT11044LFLLG | 26 A, 1100 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT11044B2FLL | 26 A, 1100 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT11044B2FLLG | 26 A, 1100 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT11044LFLL | 26 A, 1100 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT11044LFLL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Volts:1100V RDS(ON)0.44Ohms ID(cont):26Amps|FREDFETs ( fast body diode) |
| APT11058B2FLL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Volts:1100V RDS(ON)0.58Ohms ID(cont):20Amps|FREDFETs ( fast body diode) |
| APT11058JFLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT11058LFLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT11F80B | 功能描述:MOSFET N-CH 800V 12A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 8™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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