参数资料
型号: APT11GP60SA
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: IGBT 晶体管
英文描述: 41 A, 600 V, N-CHANNEL IGBT, TO-263AB
封装: TO-263, D2PAK-3
文件页数: 4/6页
文件大小: 170K
代理商: APT11GP60SA
050-7419
Rev
B
6-2004
APT11GP60K_SA
VCE = 400V
RG= 5
L = 100 H
V
GE =15V,TJ=125°C
VGE= 15V
V
GE =15V,TJ=25°C
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G, GATE RESISTANCE (OHMS)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
T
J = 25 or 125°C,VGE = 15V
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
TJ=125°C,VGE=15V
TJ= 25°C, VGE=15V
VCE = 400V
TJ = 25°C, TJ =125°C
RG= 5
L = 100 H
5
10
15
20
25
5
10
15
20
25
5
10
15
20
25
30
35
5
10
15
20
25
5
10
15
20
25
5
10
15
20
25
0
10
20
30
40
50
0
25
50
75
100
125
10
8
6
4
2
0
16
14
12
10
8
6
4
2
0
500
400
300
200
100
0
600
500
400
300
200
100
0
R
G = 5, L = 100
H, VCE = 400V
70
60
50
40
30
20
10
0
120
100
80
60
40
20
0
600
500
400
300
200
100
0
600
500
400
300
200
100
0
VCE = 400V
L = 100 H
RG = 5
VCE = 400V
L = 100 H
RG = 5
VCE = 400V
VGE = +15V
T
J = 125°C
Eon25.5A
Eoff11A
Eon211A
Eon222A
Eoff22A
Eoff5.5A
VCE = 400V
VGE = +15V
RG = 5
Eon25.5A
Eoff11A
Eon211A
Eon222A
Eoff22A
Eoff5.5A
R
G = 5, L = 100
H, VCE = 400V
T
J = 125°C, VGE = 5V
T
J = 25°C, VGE = 15V
T
J = 25°C, VGE = 15V
T
J = 125°C, VGE = 15V
相关PDF资料
PDF描述
APT11GP60KG 41 A, 600 V, N-CHANNEL IGBT, TO-220AB
APT11GP60SA 41 A, 600 V, N-CHANNEL IGBT, TO-263AB
APT11GP60K 41 A, 600 V, N-CHANNEL IGBT, TO-220AB
APT11GP60K 41 A, 600 V, N-CHANNEL IGBT, TO-220AB
APT11GP60SAG 41 A, 600 V, N-CHANNEL IGBT, TO-263AB
相关代理商/技术参数
参数描述
APT11N80BC3 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Super Junction MOSFET
APT11N80BC3G 功能描述:MOSFET N-CH 800V 11A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
APT11N80KC3 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Super Junction MOSFET
APT11N80KC3G 功能描述:MOSFET N-CH 800V 11A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:CoolMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
APT1201R2BFLL 制造商:Microsemi Corporation 功能描述: