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参数资料
| 型号： | APT11GP60SAG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 41 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封装： | TO-263, D2PAK-3 |
| 文件页数： | 3/6页 |
| 文件大小： | 170K |
| 代理商： | APT11GP60SAG |
050-7419
Rev
B
6-2004
APT11GP60K_SA
TYPICAL PERFORMANCE CURVES
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE = 15V)
FIGURE 2, Output Characteristics (V
GE = 10V)
V
GE, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE, GATE-TO-EMITTER VOLTAGE (V)
T
J, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
BV
CES
,COLLECTOR-TO-EMITTER
BREAKDOWN
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
I C
,COLLECTOR
CURRENT
(A)
VOLTAGE
(NORMALIZED)
I C,
DC
COLLECTOR
CURRENT(A)
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
V
GE
,GATE-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
0
1234
0
1234
0
2
4
6
8
10
0
5
10
152025
303540
6
8
10
12
14
16
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100 125
-50
-25
0
25
50
75 100 125 150
TJ = 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
TC=-55°C
TC=125°C
TC=25°C
VCE = 480V
VCE = 300V
VCE = 120V
VGE = 10V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
IC = 11A
TJ = 25°C
TJ = -55°C
TJ = 125°C
TC=-55°C
TC=25°C
TC=125°C
250s PULSE TEST
<0.5 % DUTY CYCLE
IC = 5.5A
IC = 11A
IC = 22A
IC = 11A
IC = 5.5A
40
35
30
25
20
15
10
5
0
80
70
60
50
40
30
20
10
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1.10
1.05
1.00
0.95
0.90
40
35
30
25
20
15
10
5
0
16
14
12
10
8
6
4
2
0
3.0
2.5
2.0
1.5
1.0
0.5
0
60
50
40
30
20
10
0
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相关代理商/技术参数 |
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| APT11N80KC3G | 功能描述:MOSFET N-CH 800V 11A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:CoolMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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