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参数资料
| 型号： | APT1201R5BFVR |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 1200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 118K |
| 代理商： | APT1201R5BFVR |
DYNAMIC CHARACTERISTICS
APT1201R5BVFR_SVFR
050-5843
Rev
A
3-2004
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.4
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 SStarting Tj = +25°C, L = 26mH, RG = 25, Peak IL = 10A
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
5 IS ≤ ID 10A, di/dt = 100A/s, Tj ≤ 150°C, RG = 2.0 VR = 1200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID 10A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -ID 10A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -ID 10A, di/dt = 100A/s)
Peak Recovery Current
(IS = -ID 10A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
t r
td(off)
tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 600V
ID = 10A @ 25°C
VGS = 15V
VDD = 600V
ID = 10A @ 25°C
RG = 1.6
UNIT
pF
nC
ns
MIN
TYP
MAX
10
40
1.3
18
Tj = 25°C
250
Tj = 125°C
430
Tj = 25°C
1.0
Tj = 125°C
2.5
Tj = 25°C
11
Tj = 125°C
17
THERMALCHARACTERISTICS
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.34
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
3700
4440
320
450
150
225
190
285
16
24
90
135
12
24
10
20
50
75
14
28
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT1201R5BVFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS V |
| APT1201R5BVFRG | 功能描述:MOSFET N-CH 1200V 10A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT1201R5BVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT1201R5BVRG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR 制造商:Microsemi 功能描述:POWER MOSFET TRANSISTOR |
| APT1201R5SVFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS V |
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