参数资料
型号: APT1204R7BLL
元件分类: JFETs
英文描述: 3.5 A, 1200 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封装: TO-247, 3 PIN
文件页数: 4/4页
文件大小: 64K
代理商: APT1204R7BLL
APTC60DDAM45CT1G
APT
C
60DDAM
45CT
1G
Rev
0
M
ar
ch,
2009
www.microsemi.com
4 – 7
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
h
e
rm
a
lImpe
da
nc
e
(
°C
/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4V
4.5V
5V
5.5V
6V
6.5V
0
40
80
120
160
200
240
280
320
360
0
5
10
15
20
25
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cu
rren
t
(A)
VGS=15&10V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=25°C
TJ=125°C
0
20
40
60
80
100
120
140
01
2
3
45
67
VGS, Gate to Source Voltage (V)
I D
,Drai
n
Cu
rren
t(
A
)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.9
0.95
1
1.05
1.1
1.15
1.2
1.25
1.3
0
20
40
60
80
100 120 140
ID, Drain Current (A)
R
DS
(o
n
)Drai
n
to
S
o
urce
ON
R
esi
stan
ce
Normalized to
VGS=10V @ 50A
0
10
20
30
40
50
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,DC
Drain
Cu
rren
t(A)
DC Drain Current vs Case Temperature
相关PDF资料
PDF描述
APT1204R7SLL 3.5 A, 1200 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET
APT1204R7KFLL 3.5 A, 1200 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
APT1204R7KFLLG 3.5 A, 1200 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
APT1204R7KLL 3.5 A, 1200 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
APT12057B2FLLG 22 A, 1200 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET
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