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参数资料
| 型号： | APT1204R7KLL |
| 元件分类： | JFETs |
| 英文描述： | 3.5 A, 1200 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 58K |
| 代理商： | APT1204R7KLL |
ADVANCE
TECHNICAL
INFORMATION
050-7339
Rev
-
3-2003
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 100V
I
D
= 74A @ 25°C
V
GS
= 15V
V
DD
= 100V
I
D
= 74A @ 25°C
R
G
= 0.6
MIN
TYP
MAX
3440
1160
88
85
26
47
11
18
26
12
UNIT
pF
nC
ns
APT20M38 HLL
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -60A)
Reverse Recovery Time (I
S
= -60A, dl
S
/dt = 100A/s)
Reverse Recovery Charge (I
S
= -60A, dl
S
/dt = 100A/s)
Peak Diode Recovery dv/dt 5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
C
V/ns
MIN
TYP
MAX
60
240
1.3
160
1.3
5
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 0.72mH, RG = 25, Peak IL = 60A
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
5dv/
dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤ -
60A di
/dt ≤ 700A/s V
R ≤
V
DSS
T
J ≤
150
°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.38
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/
dt
TO-258 Package Outline
5.08 (.200) BSC
1.14 (.045)
0.88 (.035)
17.65 (.695)
17.39 (.685)
4.19 (.165)
3.94 (.155)
Drain
Source
Gate
1.65 (.065)
1.39 (.055)
Dia. Typ.
3 Leads
17.96 (.707)
17.70 (.697)
19.05 (0.750)
12.70 (0.500)
21.21 (.835)
20.70 (.815)
8.89 (.350)
8.63 (.340)
Dimensions in Millimeters and (Inches)
3.56 (.140) BSC
6.86 (.270)
6.09 (.240)
13.84 (.545)
13.58 (.535)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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| APT12057LFLLG | 22 A, 1200 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT12057B2FLL | 22 A, 1200 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT12057B2FLL | 22 A, 1200 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT1204R7SFLL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:POWER MOS 7 FREDFET |
| APT1204R7SFLLG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS7 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR |
| APT1204R7SLL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Volts:1200V RDS(ON):4.7Ohms ID(cont:)3Amps|MOSFETs |
| APT12057B2FLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT12057B2FLLG | 功能描述:MOSFET N-CH 1200V 22A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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