- 您现在的位置：买卖IC网 > PDF目录36705 > APT12060B2VFR 20 A, 1200 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APT12060B2VFR |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 1200 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TMAX, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 121K |
| 代理商： | APT12060B2VFR |
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
APT12060B2VFR
APT12060LVFR
1200V 20A 0.600
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Power MOS V is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
Faster Switching
Avalanche Energy Rated
Lower Leakage
Popular T-MAX or TO-264
Package
POWER MOS V
T-MAX
TO-264
050-5845
Rev
A
4-2004
FREDFET
G
D
S
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID= 10A)
Zero Gate Voltage Drain Current (V
DS = 1200, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 960V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 1mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
1200
0.600
250
1000
±100
24
APT12060B2VFR_LVFR
1200
20
80
±30
±40
625
5.00
-55 to 150
300
20
50
3000
相关PDF资料 |
PDF描述 |
|---|---|
| APT12060LVFR | 20 A, 1200 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT12060B2VFR | 20 A, 1200 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT12060LVFRG | 20 A, 1200 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT12060LVFR | 20 A, 1200 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT12067JFLL | 17 A, 1200 V, 0.67 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT12060B2VFRG | 功能描述:MOSFET N-CH 1200V 20A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT12060B2VR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT12060LVFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS V |
| APT12060LVFRG | 功能描述:MOSFET N-CH 1200V 20A TO-264 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT12060LVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
发布紧急采购，3分钟左右您将得到回复。