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参数资料
| 型号： | APT12067B2FLL |
| 元件分类： | JFETs |
| 英文描述： | 18 A, 1200 V, 0.67 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | T-MAX, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 102K |
| 代理商： | APT12067B2FLL |
050-7087
Rev
B
2-2004
DYNAMIC CHARACTERISTICS
APT12067B2FLL - LFLL
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID 18A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -ID 18A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -ID 18A, di/dt = 100A/s)
Peak Recovery Current
(IS = -ID 18A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
18
72
1.3
18
Tj = 25°C
300
Tj = 125°C
600
Tj = 25°C
2.0
Tj = 125°C
6.0
Tj = 25°C
13
Tj = 125°C
21
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.22
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 15.43mH, RG = 25, Peak IL = 18A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤
-I
D
18A di
/dt ≤ 700A/s V
R ≤
1200
T
J ≤
150
°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 600V
I
D
= 18A @ 25°C
RESISTIVE SWITCHING
V
GS
= 15V
V
DD
= 600V
I
D
= 18A @ 25°C
R
G
= 0.6
INDUCTIVE SWITCHING @ 25°C
V
DD
= 800V, V
GS
= 15V
I
D
= 18A, R
G
= 5
INDUCTIVE SWITCHING @ 125°C
V
DD
= 800V, V
GS
= 15V
I
D
= 18A, R
G
= 5
MIN
TYP
MAX
4420
660
115
150
20
95
22
19
22
19
705
302
1239
402
UNIT
pF
nC
ns
J
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.25
0.2
0.15
0.1
0.05
0
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.5
SINGLE PULSE
0.1
0.3
0.7
0.9
0.05
相关PDF资料 |
PDF描述 |
|---|---|
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| APT12067LFLLG | 18 A, 1200 V, 0.67 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT12067B2FLLG | 18 A, 1200 V, 0.67 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT12067B2FLL | 18 A, 1200 V, 0.67 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT12080LVFRG | 16 A, 1200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT12067B2FLLG | 功能描述:MOSFET N-CH 1200V 18A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT12067B2LL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS |
| APT12067B2LLG | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 1200V 18A T-MAX |
| APT12067JFLL | 功能描述:MOSFET N-CH 1200V 17A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 7® 标准包装:10 系列:* |
| APT12067JLL | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 1200V 17A SOT227 |
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