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参数资料
| 型号： | APT12067JLL |
| 元件分类： | JFETs |
| 英文描述： | 17 A, 1200 V, 0.67 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ISOTOP-4 |
| 文件页数： | 5/5页 |
| 文件大小： | 94K |
| 代理商： | APT12067JLL |
050-7086
Rev
B
9-2002
APT12067JLL
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
SOT-227 (ISOTOP) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
10 %
t
d(on)
90%
10 %
5 %
t
r
Switching Energy
Gate Voltage
Drain Voltage
Drain Current
T
J
= 125 C
90%
t
d(off)
Drain Current
Drain Voltage
Gate Voltage
T
J
= 125 C
10%
0
90%
t
f
Switching Energy
IC
D.U.T.
APT15DF60B
VCE
Figure 20, Inductive Switching Test Circuit
VDD
G
相关PDF资料 |
PDF描述 |
|---|---|
| APT12067LFLL | 18 A, 1200 V, 0.67 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT12067B2FLL | 18 A, 1200 V, 0.67 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT12067LFLL | 18 A, 1200 V, 0.67 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT12067LFLLG | 18 A, 1200 V, 0.67 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT12067B2FLLG | 18 A, 1200 V, 0.67 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT12067LFLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT12067LFLLG | 功能描述:MOSFET N-CH 1200V 18A TO-264 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT12067LLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS |
| APT12080B2VFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS V |
| APT12080B2VFRG | 功能描述:MOSFET N-CH 1200V 16A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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