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参数资料
| 型号： | APT12GT60KR |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 25 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 129K |
| 代理商： | APT12GT60KR |
052-6201
Re
v
F
11-2008
APT12GT60KR(G)
THERMAL AND MECHANICAL CHARACTERISTICS
UNIT
°C/W
gm
MIN
TYP
MAX
1.16
N/A
5.9
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
RθJC
W
T
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 300V
I
C
= 10A
T
J
= 150°C, R
G
= 10
Ω, V
GE
=
15V, L = 100H,V
CE
= 600V
Inductive Switching (25°C)
V
CC
= 400V
V
GE
= 15V
I
C
= 10A
R
G
= 10
Ω
T
J
= +25°C
Inductive Switching (125°C)
V
CC
= 400V
V
GE
= 15V
I
C
= 10A
R
G
= 10
Ω
T
J
= +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4 4
Turn-on Switching Energy (Diode)
55
Turn-off Switching Energy
6
MIN
TYP
MAX
610
75
50
7.5
65
5
30
6
95
34
90
140
120
6
115
50
95
220
185
UNIT
pF
V
nC
A
ns
J
ns
J
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode.
5 E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
Microsemi Reserves the right to change, without notice, the specications and information contained herein.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT12GT60KRG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT MED FREQUENCY - SING - Rail/Tube |
| APT12M80B | 功能描述:MOSFET N-CH 800V 13A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 8™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT12M80S | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:N-Channel MOSFET |
| APT13003D | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR |
| APT13003DI-G1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR |
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