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参数资料
| 型号： | APT130N65JC6 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 130 A, 650 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ISOTOP-4 |
| 文件页数： | 1/5页 |
| 文件大小： | 153K |
| 代理商： | APT130N65JC6 |
050-7213
Rev
A
3-201
1
MAXIMUM RATINGS
All Ratings per die: T
C = 25°C unless otherwise specied.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
STATIC ELECTRICAL CHARACTERISTICS
Ultra Low R
DS(ON)
Low Miller Capacitance
Ultra Low Gate Charge, Qg
Avalanche Energy Rated
Extreme dv/dt Rated
Dual die (parallel)
Super Junction MOSFET
C
Po we r Se miconduc tors
O
O L MOS
"COOLMOS comprise a new family of transistors developed by Inneon Technologies AG. "COOLMOS" is a trade-
mark of Inneon Technologies AG."
G
D
S
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
Microsemi Website - http://www.microsemi.com
APT130N65JC6
650V
130A
0.020
Ω
Symbol
Parameter
APT130N65JC6
UNIT
V
DSS
Drain-Source Voltage
650
Volts
I
D
Continuous Drain Current @ T
C = 25°C
1
130
Amps
Continuous Drain Current @ T
C = 100°C
82
I
DM
Pulsed Drain Current 2
390
V
GS
Gate-Source Voltage Continuous
±20
Volts
P
D
Total Power Dissipation @ T
C = 25°C
781
Watts
T
J,TSTG
Operating and Storage Junction Temperature Range
-55 - to 150
°C
T
L
Lead Temperature: 0.063" from Case for 10 Sec.
300
dv/dt
Drain-Source Voltage slope (VDS = 400V, ID = 130A, TJ = 125°C)
50
I
AR
Avalanche Current 2
13.4
Amps
E
AR
Repetitive Avalanche Energy 3 ( Id = 13.4A, Vdd = 50V )
2.96
E
AS
Single Pulse Avalanche Energy
( Id = 13.4A, Vdd = 50V )
1954
mJ
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
BV
(DSS)
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 500μA)
650
Volts
R
DS(on)
Drain-Source On-State Resistance 4 (V
GS = 10V, ID = 65A)
0.02
Ohms
I
DSS
Zero Gate Voltage Drain Current (V
DS = 650V, VGS = 0V)
50
μA
Zero Gate Voltage Drain Current (V
DS = 650V, VGS = 0V, TC = 150°C)
500
I
GSS
Gate-Source Leakage Current (V
GS = ±20V, VDS = 0V)
±100
nA
V
GS(th)
Gate Threshold Voltage (V
DS = VGS, ID = 5.92mA)
2.5
3
3.5
Volts
SO
T-2
27
IS OTO P
file # E145592
"UL Recognized"
G
S
D
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