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参数资料
| 型号： | APT15GN120K |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 45 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 192K |
| 代理商： | APT15GN120K |
050-7599
Rev
B
10-2005
APT15GN120K(G)
TYPICAL PERFORMANCE CURVES
250s PULSE
TEST<0.5 % DUTY
CYCLE
15V
9V
8V
7V
10V
T
J = 125°C
T
J = 25°C
T
J = -55°C
T
J = 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
V
GE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
T
J = 125°C
T
J = 25°C
T
J = -55°C
IC = 15A
TJ = 25°C
V
CE = 600V
V
CE = 240V
V
CE =960V
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
FIGURE 2, Output Characteristics (TJ = 125°C)
V
GE, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
VGE, GATE-TO-EMITTER VOLTAGE (V)
TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
TC, CASE TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
I
C = 15A
I
C = 30A
I
C = 7.5A
BV
CES
,COLLECTOR-TO-EMITTER
BREAKDOWN
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
I C
,COLLECTOR
CURRENT
(A)
VOLTAGE
(NORMALIZED)
I C,
DC
COLLECTOR
CURRENT(A)
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
V
GE
,GATE-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1.10
1.05
1.00
0.95
0.90
I
C = 30A
I
C = 15A
I
C = 7.5A
0
1
2
3
4
5
6
0
2
4
6
8
10
0
4
8
12
16
20
0
20
40
60
80
100
8
10
12
14
16
-50 -25
0
25
50
75
100 125
-50
-25
0
25
50
75
100 125
-50 -25
0
25
50
75 100 125 150
60
50
40
30
20
10
0
16
14
12
10
8
6
4
2
0
3.0
2.5
2.0
1.5
1.0
0.5
0
60
50
40
30
20
10
0
13V
11V
12V
VGE = 15V
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相关代理商/技术参数 |
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|---|---|
| APT15GN120KG | 功能描述:IGBT 1200V 45A 195W TO220 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT15GN120SDQ1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:High Speed PT IGBT |
| APT15GN120SDQ1G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:High Speed PT IGBT |
| APT15GP60B | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:POWER MOS 7 IGBT |
| APT15GP60BDF1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
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