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参数资料
| 型号： | APT15GT120SR |
| 厂商： | MICROSEMI CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 36 A, 1200 V, N-CHANNEL IGBT |
| 封装： | D3PAK-3 |
| 文件页数： | 3/6页 |
| 文件大小： | 122K |
| 代理商： | APT15GT120SR |
052-6266
Re
v
D
7-2009
APT15GT120BR_SR(G)
TYPICAL PERFORMANCE CURVES
V
GS(TH)
,
THRESHOLD
V
O
LT
A
GE
V
CE
,COLLECT
OR-T
O-EMITTER
V
O
LT
A
GE
(V)
I C
,COLLECT
OR
CURRENT
(A)
I C
,COLLECT
OR
CURRENT
(A)
(NORMALIZED)
I
C,
DC
COLLECT
OR
CURRENT(A)
V
CE
,COLLECT
OR-T
O-EMITTER
V
O
LT
A
GE
(V)
V
GE
,GA
TE-T
O-EMITTER
V
O
LT
A
GE
(V)
I C
,COLLECT
OR
CURRENT
(A)
250s PULSE
TEST<0.5 % DUTY
CYCLE
60
50
40
30
20
10
0
16
14
12
10
8
6
4
2
0
6
5
4
3
2
1
0
45
40
35
30
25
20
15
10
5
0
14V
12V
11V
10V
13V
9V
8V
T
J = 125°C
T
J = 25°C
T
J = -55°C
V
GE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
T
J = 125°C
T
J = 25°C
T
J = -55°C
15V
45
40
35
30
25
20
15
10
5
0
45
40
35
30
25
20
15
10
5
0
6
5
4
3
2
1
0
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T
J
= 25°C)
FIGURE 2, Output Characteristics (T
J
= 125°C)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
T
J
, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
C
, CASE TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
0
1
2
3
4
5
6
7
0
5
10
15
20
25
30
0
2
4
6
8
10
12
14
0
20
40
60
80
100
120
9
10
11
12
13
14
15
16
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
V
CE
= 960V
V
CE
= 600V
V
CE
= 240V
I
C
= 15A
T
J
= 25°C
T
J = 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C
= 30A
I
C
= 15A
I
C
= 7.5A
I
C
= 30A
I
C
= 15A
I
C
= 7.5A
V
GE
= 15V
相关PDF资料 |
PDF描述 |
|---|---|
| APT15GT120BR | 36 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| APT15GT60BR | 30 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT15GT60BR | 30 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT15GT60KR | 42 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| APT15GT60KRG | 42 A, 600 V, N-CHANNEL IGBT, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT15GT120SRG | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt IGBT |
| APT15GT60BR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT15GT60BRD | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT15GT60BRDQ1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT15GT60BRDQ1G | 功能描述:IGBT 600V 42A 184W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
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