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参数资料
| 型号： | APT17N80BC3 |
| 元件分类： | JFETs |
| 英文描述： | 17 A, 800 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 176K |
| 代理商： | APT17N80BC3 |
APT17N80BC3_SC3
Typical Performance Curves
Crss
Ciss
Coss
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
800
0
10
20
30
40
50
0
20
40
60
80
100
120 140
0.3
0.5
0.7
0.9
1.1
1.3
1.5
51
10
5
1
.1
16
12
8
4
0
TC=+25°C
TJ=+150°C
SINGLE PULSE
10mS
1mS
100S
TJ=+150°C
TJ=+25°C
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 533V
R
G = 5
T
J = 125°C
L = 100H
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t rand
t
f
(ns)
5
10
15
20
25
30
5
10
15
20
25
30
5
1015
2025
30
0
5
10 15 20 25 30 35 40 45 50
V
DD = 533V
I
D = 17A
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
VDS=400V
VDS=160V
VDS=640V
I
D = 17A
td(on)
td(off)
Eon
Eoff
100
90
80
70
60
50
40
30
20
10
0
800
600
400
200
0
V
DD = 533V
R
G = 5
T
J = 125°C
L = 100H
V
DD = 533V
R
G = 5
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
20,000
10,000
1000
100
10
200
100
10
1
OPERATIONHERE
LIMITEDBYRDS(ON)
50
40
30
20
10
0
1200
1000
800
600
400
200
0
050-7142
Rev
D
4-2004
相关PDF资料 |
PDF描述 |
|---|---|
| APT17N80BC3 | 17 A, 800 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT20GN60B | 40 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT20GN60BG | 40 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT20GN60B | 40 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT20GT60KR | 43 A, 600 V, N-CHANNEL IGBT, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT17N80BC3G | 功能描述:MOSFET N-CH 800V 17A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:CoolMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT17N80SC3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Super Junction MOSFET |
| APT17N80SC3G | 功能描述:MOSFET N-CH 800V 17A D3PAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:CoolMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT17NTR-G1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE NPN TRANSISTOR |
| APT17Z-G1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE NPN TRANSISTOR |
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