参数资料
型号: APT2012P3BT
厂商: Kingbright Corp
文件页数: 5/5页
文件大小: 0K
描述: PHOTOTRANSISTOR IR NPN 940NM SMD
产品目录绘图: APT Series Bottom
APT Series Side 1
APT Series Side 2
标准包装: 1
电压 - 集电极发射极击穿(最大): 30V
电流 - 集电极 (Ic)(最大): 1mA
电流 - 暗 (Id)(最大): 100nA
功率 - 最大: 100mW
安装类型: 表面贴装
方向: 顶视图
封装/外壳: 2-SMD,无引线
产品目录页面: 2790 (CN2011-ZH PDF)
其它名称: 754-1436-6
PACKING & LABEL SPECIFICATIONS
APT2012P3BT
Terms and conditions for the usage of this document
1.The information included in this document reflects representative usage scenarios and is intended
for technical reference only.
2.The part number, type, and specifications mentioned in this document are subject to future change
and improvement without notice. Before production usage customer should refer to the latest
datasheet for the updated specifications.
3.When using the products referenced in this document, please make sure the product is being
operated within the environmental and electrical limits specified in the datasheet. If customer usage
exceeds the specified limits, Kingbright will not be responsible for any subsequent issues.
4.The information in this document applies to typical usage in consumer electronics applications.
If customer's application has special reliability requirements or have life-threatening liabilities,
such as automotive or medical usage, please consult with Kingbright representative for further
assistance.
5.The contents and information of this document may not be reproduced or re-transmitted without
permission by Kingbright.
6.All design applications should refer to Kingbright application notes available at
http://www.KingbrightUSA.com/ApplicationNotes
SPEC NO: DSAH3784
APPROVED: WYNEC
REV NO: V.6
CHECKED: Allen Liu
DATE: JAN/03/2014
DRAWN: Q.M.Chen
PAGE: 5 OF 5
ERP: 1203001828
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