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参数资料
| 型号： | APT20GN60BDQ2(G) |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 40 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 8/9页 |
| 文件大小： | 237K |
| 代理商： | APT20GN60BDQ2(G) |
APT20GN60B_SDQ2(G)
050-7636
Rev
A
1-201
1
TYPICAL PERFORMANCE CURVES
T
J
= 125°C
V
R
= 400V
15A
30A
60A
t
rr
Q
rr
Q
rr
t
rr
I
RRM
200
180
160
140
120
100
80
60
40
20
0
25
20
15
10
5
0
Duty cycle = 0.5
T
J
= 175°C
0
25
50
75
100
125
150
25
50
75
100
125
150
175
1
10
100 200
60
50
40
30
20
10
0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
200
180
160
140
120
100
80
60
40
20
0
C
J
,JUNCTION
CAP
A
CIT
ANCE
K
f
,D
YNAMIC
P
ARAMETERS
(pF)
(Nor
maliz
ed
to
1000A/
s)
I F(A
V)
(A)
T
J
, JUNCTION TEMPERATURE (°C)
Case Temperature (°C)
Figure 29. Dynamic Parameters vs. Junction Temperature
Figure 30. Maximum Average Forward Current vs. CaseTemperature
V
R
, REVERSE VOLTAGE (V)
Figure 31. Junction Capacitance vs. Reverse Voltage
100
80
60
40
20
0
1200
1000
800
600
400
200
0
V
F
, ANODE-TO-CATHODE VOLTAGE (V)
-di
F
/dt, CURRENT RATE OF CHANGE(A/s)
Figure 25. Forward Current vs. Forward Voltage
Figure 26. Reverse Recovery Time vs. Current Rate of Change
-di
F
/dt, CURRENT RATE OF CHANGE (A/s)
-di
F
/dt, CURRENT RATE OF CHANGE (A/s)
Figure 27. Reverse Recovery Charge vs. Current Rate of Change
Figure 28. Reverse Recovery Current vs. Current Rate of Change
0
0.5
1.0
1.5
2.0
2.5
3.0
0
200
400
600
800
1000
1200
0
200
400
600
800
1000
1200
0
200
400
600
800
1000
1200
Q
rr
,REVERSE
RECO
VER
Y
CHARGE
I F
,FOR
W
ARD
CURRENT
(nC)
(A)
I
RRM
,REVERSE
RECO
VER
Y
CURRENT
t rr
,REVERSE
RECO
VER
Y
TIME
(A)
(ns)
T
J
= 175°C
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
T
J
= 125°C
V
R
= 400V
60A
30A
15A
T
J
= 125°C
V
R
= 400V
60A
15A
30A
相关PDF资料 |
PDF描述 |
|---|---|
| APT20GN60BDQ2 | 40 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT20GN60SDQ2(G) | 40 A, 600 V, N-CHANNEL IGBT |
| APT20GS60BRDQ1 | 37 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT20GS60SRDQ1 | 37 A, 600 V, N-CHANNEL IGBT |
| APT20GS60KR(G) | 37 A, 600 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT20GN60BG | 功能描述:IGBT 600V 40A 136W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT20GN60K | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:High Speed PT IGBT |
| APT20GN60KG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - FIELDSTOP LOW FREQ - SIN - Rail/Tube |
| APT20GN60S | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT20GN60SDQ1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:High Speed PT IGBT |
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