- 您现在的位置：买卖IC网 > PDF目录36707 > APT20GN60BDQ2 (MICROSEMI POWER PRODUCTS GROUP) 40 A, 600 V, N-CHANNEL IGBT, TO-247 PDF资料下载
参数资料
| 型号： | APT20GN60BDQ2 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 40 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 3/9页 |
| 文件大小： | 237K |
| 代理商： | APT20GN60BDQ2 |
050-7636
Rev
A
1-201
1
APT20GN60B_SDQ2(G)
BV
CES
,COLLECT
OR-T
O-EMITTER
BREAKDOWN
V
CE
,COLLECT
OR-T
O-EMITTER
VOL
TAGE
(V)
I C
,COLLECT
OR
CURRENT
(A)
I C
,COLLECT
OR
CURRENT
(A)
VOL
TAGE
(NORMALIZED)
I
C,
DC
COLLECT
OR
CURRENT(A)
V
CE
,COLLECT
OR-T
O-EMITTER
VOL
TAGE
(V)
V
GE
,GA
TE-T
O-EMITTER
VOL
TAGE
(V)
I C
,COLLECT
OR
CURRENT
(A)
250μs PULSE
TEST<0.5 % DUTY
CYCLE
90
80
70
60
50
40
30
20
10
0
16
14
12
10
8
6
4
2
0
3.0
2.5
2.0
1.5
1.0
0.5
0
60
50
40
30
20
10
0
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T
J = 25°C)
FIGURE 2, Output Characteristics (T
J = 125°C)
V
GE, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE, GATE-TO-EMITTER VOLTAGE (V)
T
J, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
15V
12V
11V
10V
13V
9V
8V
T
J = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
V
GE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
T
J = 125°C
T
J = 25°C
T
J = -55°C
T
J = 175°C
T
J = 125°C
T
J = 25°C
T
J = -55°C
T
J = 175°C
14V
40
35
30
25
20
15
10
5
0
60
50
40
30
20
10
0
3.0
2.5
2.0
1.5
1.0
0.5
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
25
30
0
5
10
15
0
20
40
60
80
100
120
140
6
8
10
12
14
16
0
25
50
75
100
125
150
175
-50 -25
0
25
50
75 100 125 150 175
-50 -25
0
25
50
75 100 125 150 175
V
CE = 120V
I
C = 20A
T
J = 25°C
V
CE = 300V
V
CE = 480V
I
C = 40A
I
C = 20A
I
C = 10A
I
C = 40A
I
C = 20A
I
C = 10A
V
GE = 15V
TYPICAL PERFORMANCE CURVES
相关PDF资料 |
PDF描述 |
|---|---|
| APT20GN60SDQ2(G) | 40 A, 600 V, N-CHANNEL IGBT |
| APT20GS60BRDQ1 | 37 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT20GS60SRDQ1 | 37 A, 600 V, N-CHANNEL IGBT |
| APT20GS60KR(G) | 37 A, 600 V, N-CHANNEL IGBT |
| APT20GT60AR | 30 A, 600 V, N-CHANNEL IGBT, TO-204AE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT20GN60BG | 功能描述:IGBT 600V 40A 136W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT20GN60K | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:High Speed PT IGBT |
| APT20GN60KG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - FIELDSTOP LOW FREQ - SIN - Rail/Tube |
| APT20GN60S | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT20GN60SDQ1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:High Speed PT IGBT |
发布紧急采购，3分钟左右您将得到回复。